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| Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 6.90.1 2.50.1 1.0 Unit: mm 2.40.2 2.00.2 3.50.1 q q Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25C) Ratings 30 60 25 50 7 1 0.5 600 150 -55 ~ +150 Unit V 1.0 0.450.05 1 s Features 1.5 1.5 R0.9 R0.9 0.4 1.00.1 R 0. 7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 0.85 0.550.1 3 2 emitter voltage 2SD639 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 2.5 2.5 V A A mW C C 1:Base 2:Collector 3:Emitter EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD638 2SD639 2SD638 2SD639 (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA VCB = 10V, IE = -50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 1.250.05 max 0.1 1 4.10.2 4.50.1 Unit A A V 30 60 25 50 7 85 40 160 90 0.35 200 6 *2 V V 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 0.6 V MHz 15 pF Pulse measurement *1h FE1 Rank classification Q 85 ~ 170 R 120 ~ 240 S 170 ~ 340 Rank hFE1 1 Transistor PC -- Ta 800 800 700 2SD638, 2SD639 IC -- VCE Ta=25C IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 400 300 200 100 0 3mA 2mA 1mA 800 VCE=10V Ta=25C 700 IC -- I B Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 0 40 80 120 160 200 600 500 Collector current IC (mA) 20 600 500 400 300 200 100 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=10 300 hFE -- IC VCE=10V Forward current transfer ratio hFE 250 Ta=75C 200 25C -25C 150 100 50 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 240 12 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C 104 ICEO -- Ta VCE=10V VCB=10V Ta=25C Transition frequency fT (MHz) 200 10 103 8 160 ICEO (Ta) ICEO (Ta=25C) 1 3 10 30 100 120 6 102 80 4 10 2 40 0 -1 0 -3 -10 -30 -100 1 0 40 80 120 160 200 Emitter current IE (mA) Collector to base voltage VCB (V) Ambient temperature Ta (C) 2 |
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